{"record":{"author":{"account_ref":null,"orcid":null},"builds_on":[],"content_schema":"pubphys.content.topic/1","content_sha256":"7e6df9b424faaf66943e6a5b5aedd692712c42159590be2cdd7533bf3c17979c","created":"2026-10-03T07:17:51Z","files":[],"origin":{"assisted_by":[],"kind":"seed"},"parents":[],"salt":"5464abe3e3f1aecf9e9c81370362b79417b6d28ff599b04eada0d775e3798d46","schema":"pubphys.record/2","site":"pubphys.com","target":null,"type":"topic"},"content":{"external_id":"cm.multiferroics","field":"cm","n":"1","review_cite":"N. A. Spaldin, R. Ramesh, Advances in magnetoelectric multiferroics, Nature Materials, 2019","review_link":"https://doi.org/10.1038/s41563-018-0275-2","review_verified":"true","summary":"Multiferroics are materials that are both magnetic and ferroelectric, meaning they hold a spontaneous electric polarization. In the best cases an electric field can flip the magnetism, which would allow memory written with voltage instead of current.","title":"Multiferroics and magnetoelectric coupling","topic_ref":null,"why":"Voltage-controlled magnetism could cut the energy of writing a memory bit by orders of magnitude."},"attested":{"attestation":{"batch":null,"client_id":null,"id_token_sha256":null,"kind":"platform"},"record_hash":"87053ab66198285a41dc47ad97182dd67de190ae0a1fe915cd27ab2466d618c1","schema":"pubphys.attested/1"},"envelope":{"attested_hash":"ce564d712768d8e94652c9695a4446eaf284c63510f0501df1a3ef8ab118fe95","platform_signature":{"key_id":"c6afc19b31429869751f06879c75cd64ea92654423d15b44be775bf1310a60da","sig":"--r56J2XLmg8LiRSA-gIG_m-PpKW-cDlgcOvmryrFnCUj7oGayx9uglM5MpSkZjnjOl2h0ldRudm3vC851UYBQ"},"schema":"pubphys.envelope/1"},"record_hash":"87053ab66198285a41dc47ad97182dd67de190ae0a1fe915cd27ab2466d618c1","leaf_index":158}