Semiconductor moire Hubbard and Kondo lattices
Stacking two different semiconductor sheets, such as WSe2 on WS2 or MoTe2 on WSe2, creates a triangular grid of traps for electrons, a tunable version of the Hubbard model (electrons hopping between sites and repelling each other when they share one). Gates change the electron number and the hopping, so Mott insulators (insulators caused by repulsion), electron crystals and heavy-electron metals appear in one device.
Why it matters
They allow phase transitions of strongly interacting electrons to be tuned continuously in a single sample, which bulk crystals do not allow.
Review
D. M. Kennes, M. Claassen, L. Xian, A. Georges, A. J. Millis, J. Hone, C. R. Dean, D. N. Basov, A. N. Pasupathy, A. Rubio, Moire heterostructures as a condensed-matter quantum simulator, Nature Physics, 2021. https://doi.org/10.1038/s41567-020-01154-3 reference checked
Proof
- Signed record
- c8c40cb151cd…
- Public log
- Entry 157, in checkpoint 2,123
- Bitcoin date
- Block 969,698, 2026-10-03